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2SA812 M7 Datasheet
Datasheet specifications
| Datasheet's name | 2SA812 M7 |
|---|---|
| File size | 84.2 KB |
| File type | |
| Number of pages | 4 |
Download Datasheet 2SA812 M7 |
Download Datasheet |
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: Jiangsu Changjing Electronics Technology Co., Ltd. 2SA812 M7
- Transistor Type: PNP
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 100mA
- Power Dissipation (Pd): 200mW
- Transition Frequency (fT): 180MHz
- DC Current Gain (hFE@Ic,Vce): 300@1mA,6V
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 50V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 300mV@100mA,10mA
- Package: SOT-23
- Manufacturer: Jiangsu Changjing Electronics Technology Co., Ltd.